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FDC3535

Fairchild Semiconductor
Part Number FDC3535
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Aug 3, 2015
Detailed Description FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ June 2010 Feature...
Datasheet PDF File FDC3535 PDF File

FDC3535
FDC3535

Overview
FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.
1 A, 183 mΩ June 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.
1 A „ Max rDS(on) = 233 mΩ at VGS = -4.
5 V, ID = -1.
9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications „ Load Switch „ Synchronous Rectifier S D D Pin 1 D D Supe...


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