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FDS3512

ON Semiconductor
Part Number FDS3512
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description FDS3512 FDS3512 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifi...
Datasheet PDF File FDS3512 PDF File

FDS3512
FDS3512

Overview
FDS3512 FDS3512 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features • 4.
0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
• Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation ...


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