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FDS3572

ON Semiconductor
Part Number FDS3572
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 80 V, 8.9 A, 16 mW FDS3572 Features • RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A •...
Datasheet PDF File FDS3572 PDF File

FDS3572
FDS3572

Overview
MOSFET – N-Channel, POWERTRENCH) 80 V, 8.
9 A, 16 mW FDS3572 Features • RDS(ON) = 14 W (Typ.
), VGS = 10 V, ID = 8.
9 A • Qg(tot) = 31 nC (Typ.
), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free and Halide Free Applications • Primary Switch for Isolated DC−DC Converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current A C...


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