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XP161A1265PR-G

Torex Semiconductor
Part Number XP161A1265PR-G
Manufacturer Torex Semiconductor
Description Power MOSFET
Published Dec 27, 2023
Detailed Description XP161A1265PR-G Power MOSFET ETR11023-004 ■GENERAL DESCRIPTION The XP161A1265PR is an N-channel Power MOSFET with low o...
Datasheet PDF File XP161A1265PR-G PDF File

XP161A1265PR-G
XP161A1265PR-G

Overview
XP161A1265PR-G Power MOSFET ETR11023-004 ■GENERAL DESCRIPTION The XP161A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
11 2x ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING G：Gate S：Source D：Drain ■FEATURES Low On-State Resistance : Rds(on)=0.
055Ω@ Vgs=4.
5V : Rds(on)=0.
095Ω@ Vgs=2.
5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.
5V N-Channel Power MOSFET DMOS Structure Package : SOT-89 ■PRODUCT NAME PRODUCT PACKAGE XP161A1265PR-G* SOT-89 ORDER UNIT 1,000pcs/Reel (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant * x represents production lot number.
■EQUIVALENT CIRCUIT ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Vdss 20 V Vgss ±12 V Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr Channel Power Dissipation * Pd 4 A 2 W Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55~150 ℃ * When implemented on a ceramic PCB (900mm2 x 0.
8mm) 1/6 XP161A1265PR-G ■ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER SYMBOL CONDITIONS Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Idss Igss Vgs(off) Drain-Source On-State Resistance*1 Rds(on) Vds=20V, Vgs= 0V Vgs= ±12V, Vds= 0V Id= 1mA, Vds= 10V Id= 2A, Vgs= 4.
5V Id= 2A, Vgs= 2.
5V Forward Transfer Admittance*1 | Yfs | Id= 2A, Vds= 10V Body Drain Diode Forward Voltage Vf *1 Effective during pulse test.
If= 4A, Vgs= 0V MIN.
- 0.
7 - TYP.
- 0.
042 0.
070 Ta = 25℃ MAX.
UNITS 10 μA ±10 μA 1.
4 V...


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