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XP161A1265PR

Torex Semiconductor
Part Number XP161A1265PR
Manufacturer Torex Semiconductor
Description Power MOS FET
Published Apr 16, 2005
Detailed Description x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.055Ω MAX x Gate Protect Diode Built-in x Ultra H...
Datasheet PDF File XP161A1265PR PDF File

XP161A1265PR
XP161A1265PR

Overview
x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.
055Ω MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 Package s General Description The XP161A1265PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.
055Ω(Vgs=4.
5V) Rds(on)=0.
095Ω(Vgs=2.
5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 2.
5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source SOT-89 (TOP VIEW) s Equivalent Circuit s Absolute Maximum Ratings PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 ±12 4 16 4 2 150 -55~150 Ta=25 : UNITS V V A A A W : : 1 2 3 Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature N-Channel MOS FET (1 device built-in) Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test.
Ta=25 : SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=20V, Vgs=0V Vgs=±12V, Vds=0V Id=1mA, Vds=10V Id=2A, Vgs=4.
5V Id=2A, Vgs=2.
5V Id=2A, Vds=10V If=4A, Vgs=0V MIN TYP MAX 10 ±10 0.
7 0.
042 0.
07 8 0.
85 1.
1 1.
4 0.
055 0.
095 UNITS µA µA V Ω Ω S V Dynamic characteristics PARAMETER Input Capacitance...


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