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TP0610T

Microchip
Part Number TP0610T
Manufacturer Microchip
Description P-Channel Vertical DMOS FET
Published Jan 21, 2024
Detailed Description TP0610T P-Channel Enhancement-Mode Vertical DMOS FET Features • High Input Impedance and High Gain • Low Power Drive R...
Datasheet PDF File TP0610T PDF File

TP0610T
TP0610T


Overview
TP0610T P-Channel Enhancement-Mode Vertical DMOS FET Features • High Input Impedance and High Gain • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • Free from Secondary Breakdown Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photo-Voltaic Drives • Analog Switches • Power Management • Telecommunication Switches General Description The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Package Type 3-lead SOT-23 (TO-236AB) (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information.
 2019-2020 Microchip Technology Inc.
DS20005701B-page 1 TP0610T 1.
0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage .
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BVDGS Gate-to-Source Voltage.
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±20V Operating Ambient Temperature, TA ...



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