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TP0610T

Supertex Inc
Part Number TP0610T
Manufacturer Supertex Inc
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Published Apr 16, 2005
Detailed Description Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► High input impedance and high gain ►►...
Datasheet PDF File TP0610T PDF File

TP0610T
TP0610T

Overview
Supertex inc.
TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► Free from secondary breakdown Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic systems ►► Analog switches ►► Power management ►► Telecom switches General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information Device Package Options TO-236AB (SOT-23) TP0610T TP0610T-G For packaged products, -G indicates package is RoHS compliant (‘Green’).
Consult factory for die / wafer form part numbers.
Refer to Die Specification VF21 for layout and dimensions.
Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Value BVDSS BVDGS ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect device reliability.
All voltages are referenced to device ground.
BVDSS/BVDGS (V) -...


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