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VN0106

Microchip
Part Number VN0106
Manufacturer Microchip
Description N-Channel Vertical DMOS FET
Published Jan 22, 2024
Detailed Description VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Require...
Datasheet PDF File VN0106 PDF File

VN0106
VN0106


Overview
VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.
) General Description The VN0106 Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Package Type 3-lead TO-92 (Top view) See Table 3-1 for pin information.
SOURCE DRAIN GATE  2021 Microchip Technology Inc.
DS20006570A-page 1 VN0106 1.
0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage .
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BVDSS Drain-to-Gate Voltage .
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BVDGS Gate-to-Source Voltage .
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±20V Operating Ambient Temperature, TA .
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