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VN0106


Part Number VN0106
Manufacturer Supertex Inc
Title N-Channel Enhancement-Mode Vertical DMOS FET
Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process....
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain Applications
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply c...

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VN0104 : This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desire.

VN0104N2 : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0104N3 : "§upertexinc. Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VNOI A data sheet was chosen as an example because this is one of the most popular devices and has the largest choice of packages. The product nomenclature shown applies only to' Supertex proprietary products. 'Iftl:I.! iu p e r t e x - 'DC . VN01A ~ JJ Device Structure V: Vertical DMOS (discretes & quads) T: Low threshold vertical DMOS discretes A: Lateral DMOS arrays Type of Channel N Channel, or P Channel Design Supertex Family number Voltage Range Su.

VN0104N5 : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0104N6 : (t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array ROS(ON) (max) 30 30 Order Number I Package 14-Pin P-Dip 14-Pin C-Dlp' VN0104NS VN0104N7 VN010SNS VN010SN7 Features o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low CISS and fast switching speeds o High input impedance and high gain Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, .

VN0104N7 : (t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array ROS(ON) (max) 30 30 Order Number I Package 14-Pin P-Dip 14-Pin C-Dlp' VN0104NS VN0104N7 VN010SNS VN010SN7 Features o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low CISS and fast switching speeds o High input impedance and high gain Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, .

VN0104N9 : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0104NO : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0106 : The VN0106 Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. .

VN0106N2 : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0106N3 : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0106N5 : "§upertexinc. Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VNOI A data sheet was chosen as an example because this is one of the most popular devices and has the largest choice of packages. The product nomenclature shown applies only to' Supertex proprietary products. 'Iftl:I.! iu p e r t e x - 'DC . VN01A ~ JJ Device Structure V: Vertical DMOS (discretes & quads) T: Low threshold vertical DMOS discretes A: Lateral DMOS arrays Type of Channel N Channel, or P Channel Design Supertex Family number Voltage Range Su.

VN0106N6 : (t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array ROS(ON) (max) 30 30 Order Number I Package 14-Pin P-Dip 14-Pin C-Dlp' VN0104NS VN0104N7 VN010SNS VN010SN7 Features o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low CISS and fast switching speeds o High input impedance and high gain Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, .

VN0106N7 : (t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array ROS(ON) (max) 30 30 Order Number I Package 14-Pin P-Dip 14-Pin C-Dlp' VN0104NS VN0104N7 VN010SNS VN010SN7 Features o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low CISS and fast switching speeds o High input impedance and high gain Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, .

VN0106N9 : , "§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs VN01A Ordering Information BVDSS ' RDS(ON) ID(ON) BVDGS (max) (min) To-39 TO-92 TO-52 Order Number' Package To-220 Quad P-DIP Quad C-DIP Quad C-LCC DICE 40V 30 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 - VN0104ND 60V 30 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND 90V 30 2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5 - - VN0109NE VN0109ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain .

VN0106NE : .




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