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VN0106

Supertex Inc
Part Number VN0106
Manufacturer Supertex Inc
Description N-Channel Enhancement-Mode Vertical DMOS FET
Published Apr 16, 2005
Detailed Description VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive require...
Datasheet PDF File VN0106 PDF File

VN0106
VN0106


Overview
VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain Applications ► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information Device Package Option TO-92 VN0106 VN0106N3-G -G indicates package is RoHS compliant (‘Green’) BVDSS/BVDGS (V) 60 RDS(ON) (max) (Ω) 3.
0 Pin Configuration ID(ON) (min) (A) 2.
0 Absolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSS BVDGS ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect device reliability.
All voltages are referenced to device ground.
* Distance of 1.
6mm from case for 10 seconds.
SOURCE DRAIN GATE TO-92 (N3) Product Marking SiVN YY ...


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