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TPCP8902

Toshiba
Part Number TPCP8902
Manufacturer Toshiba
Description Silicon Dual Transistor
Published Jan 30, 2024
Detailed Description TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Swi...
Datasheet PDF File TPCP8902 PDF File

TPCP8902
TPCP8902

Overview
TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Switching Applications 0.
33±0.
05 0.
05 M A 8 5 Unit: mm • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.
2 A) : NPN hFE = 200 to 500 (IC = 0.
2 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.
20 V (max) : NPN VCE (sat) = 0.
14 V (max) • High-speed switching : PNP tf = 40 ns (typ.
) : NPN tf = 45 ns (typ.
) 0.
475 1 4 0.
65 2.
9±0.
1 S 0.
025 S 0.
17±0.
02 B 0.
05 M B A 0.
8±0.
05 0.
28 +0.
1 -0.
11 2.
4±0.
1 2.
8±0.
1 Absolute Maximum Ratings (Ta = 25°C) 1.
12+-00.
.
1132 Characteristics Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Pulse (Note 1 ) VCBO VCEX VCEO VEBO IC ICP Rating Unit PNP NPN −30 60 V −30 50 V −30 30 −7 7 V −2.
0 2.
0 A −8.
0 8.
0 1.
12+-00.
.
1132 1.
Emitter1 2.
Base1 3.
Emitter2 4.
Base2 5.
Collector2 6.
Collector2 7.
Collec...


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