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TPCP8901

Toshiba Semiconductor
Part Number TPCP8901
Manufacturer Toshiba Semiconductor
Description Silicon Dual Transistor
Published Feb 20, 2010
Detailed Description TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Swi...
Datasheet PDF File TPCP8901 PDF File

TPCP8901
TPCP8901

Overview
TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Switching Applications 0.
33±0.
05 0.
05 M A 8 5 Unit: mm • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.
1 A) :NPN hFE = 400 to 1000 (IC = 0.
1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.
20 V (max) : NPN VCE (sat) = 0.
17 V (max) • High-speed switching : PNP tf = 70 ns (typ.
) : NPN tf = 85 ns (typ.
) 0.
475 1 4 0.
65 2.
9±0.
1 S 0.
025 S 0.
17±0.
02 B 0.
05 M B A 0.
8±0.
05 0.
28 +0.
1 -0.
11 2.
4±0.
1 2.
8±0.
1 Absolute Maximum Ratings (Ta = 25°C) 1.
12+-00.
.
1132 Characteristics Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Pulse (Note 1 ) Base current VCBO VCEO VEBO IC ICP IB Rating Unit PNP NPN −50 100 V −50 50 V −7 7 V −0.
8 1.
0 A −5.
0 5.
0 −100 100 mA 1.
12+-00.
.
1132 1.
Emitter1 2.
Base1 3.
Emitter2 4.
Base2 5.
Collector2 6...


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