DatasheetsPDF.com

MG1006

Microsemi
Part Number MG1006
Manufacturer Microsemi
Description GUNN Diodes
Published Feb 12, 2024
Detailed Description ® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 – MG1060 Features ● CW Designs to 500 m...
Datasheet PDF File MG1006 PDF File

MG1006
MG1006

Overview
® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 – MG1060 Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.
9–95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.
The layers are processed using proprietary techniques resulting in low phase and 1/f noise.
Our Gunn diodes are available in a variety o...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)