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MG1009 Datasheet PDF


Part Number MG1009
Manufacturer Microsemi
Title GUNN Diodes
Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (...
Features
● CW Designs to 500 mW
● Pulsed Designs to 10 W
● Frequency Coverage Specified from 5.9
  –95 GHz
● Low Phase Noise
● High Reliability Applications
● Motion Detectors
● Transmitters and Receivers
● Beacons
● Automotive Collision Avoidance Radars
● Radars
● Radiometers
● Instrumentation Description Mic...

File Size 205.73KB
Datasheet MG1009 PDF File








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MG1001 : Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz. IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. These products are supplied with a RoHS . complaint Gold finish Copyright © 2008 Rev.

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MG1003 : Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz. IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. These products are supplied with a RoHS . complaint Gold finish Copyright © 2008 Rev.

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