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60NM65

UTC
Part Number 60NM65
Manufacturer UTC
Description 650V N-CHANNEL SUPER-JUNCTION MOSFET
Published Mar 11, 2024
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 60NM65 60A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 60NM65 is a Super ...
Datasheet PDF File 60NM65 PDF File

60NM65
60NM65

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 60NM65 60A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 60NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
This power MOSFET is usually used at AC-DC converters for power applications.
 FEATURES * RDS(ON) ≤ 0.
065 Ω @ VGS=10V, ID=30A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60NM65L-T3F-T 60NM65G-T3F-T 60NM65L-T3P-T 60NM65G-T3P-T 60NM65L-T47-T 60NM65G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-3PF TO-3P TO-247 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2024 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R205-165.
E 60NM65 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 60 A 120 A Avalanche Current (Note 2) IAR 10 A Avalanche Energy Single Pulsed (Note 3) EAS 2000 mJ Peak Diode Recovery dv/dt dv/dt 8 V/ns TO-247 156 W Power Dissipation TO-3P PD 250 W TO-3PF 80 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L = 36mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4.
ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient TO-247 TO-3P/TO-3PF TO-247 Junction to Case TO...


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