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60NM60

STMicroelectronics
Part Number 60NM60
Manufacturer STMicroelectronics
Description STY60NM60
Published Mar 21, 2008
Detailed Description www.DataSheet4U.com STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM60 V...
Datasheet PDF File 60NM60 PDF File

60NM60
60NM60

Overview
www.
DataSheet4U.
com STY60NM60 N-CHANNEL 600V - 0.
050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM60 VDSS 600V RDS(on) < 0.
055Ω ID 60 A TYPICAL RDS(on) = 0.
050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
2 1 3 Max247 INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STY60NM60 MARKING Y60NM60 PACKAGE Max247 PACKAGING TUBE July 2003 1/8 www.
DataSheet4U.
com STY60NM60 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15KΩ) Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 600 600 ±30 60 37.
8 240 560 6 4.
5 15 –65 to 150 150 Unit V V V A A A W KV W/°C V/ns °C °C (•)Pulse width limited by safe operating area (1) ISD ≤60A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.
22 30 300 °C/W °C/W °C Maximum Lead Temperature For Soldering Pu...


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