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BF998

Infineon
Part Number BF998
Manufacturer Infineon
Description Silicon N-Channel MOSFET Tetrode
Published Mar 14, 2024
Detailed Description Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-control...
Datasheet PDF File BF998 PDF File

BF998
BF998

Overview
Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package BF998.
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ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF998 SOT143 1=S 2=D 3=G2 4=G1 - - BF998R SOT143R 1=D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Symbol Value Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS ≤ 76 °C, BF998, BF998R Storage temperature Channel temperature VDS ID ±IG1/2SM Ptot TStg Tch 12 30 10 200 -55 .
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150 150 Thermal Resistance Parameter Symbol Value Channel - soldering point1), BF998, BF998R Rthchs ≤ 370 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Marking MOs MRs Unit V mA °C Unit K/W 1 2011-06-06 BF998.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±VG2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA V(BR)DS 12 - -V ±V(BR)G1SS 8 - 12 ±V(BR)G2SS 8 - 12 ±IG1SS - - 50 nA ±IG2SS - - 50 nA IDSS 5 9 15 mA -VG1S(p) - 0.
8 2.
5 V -VG2S(p) - 0.
8 2 2 2011-06-06 BF998.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
AC Characteristics (verified by random sampling) Forward transconductance VDS = 8 V, ID = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 8 V,...


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