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2N721

Motorola
Part Number 2N721
Manufacturer Motorola
Description PNP silicon annular transistor
Published Nov 8, 2018
Detailed Description 1212N (SILICON) PNP silicon annular transistor for high-frequency general-purpose amplifier applications. CASE 22 (TO....
Datasheet PDF File 2N721 PDF File

2N721
2N721

Overview
1212N (SILICON) PNP silicon annular transistor for high-frequency general-purpose amplifier applications.
CASE 22 (TO.
18) Collector connected to case MAXIMUM RAilNGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Total Device Dissipation @ TA=25°C (Derate above 25DC) VCEO VCER VCB VEB PD Total Device Dissipation @ TC",25°C (Derate above 25°C) TC =100°C PD Operating & Stbrage Junction Temperature Range TJI Tstg Value 35 50 50 5.
0 0.
40 2.
67 1.
5 0.
75 10 -65 to +200 Unit Vdc Vdc Vdc Vdc Watts mW!OC Watts mW/oC DC 2-83 2N721 (continued) ELECTRICAL CHARACTERISTICS cr.
= 25'C .
_ Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage" (Ic= 100 mAdc, IB = 0) Collector-Emitter Sustaining Voltage" (IC = 100 mAde, RaE :; 100 ohms) Collector-Base Breakdown Voltage (Ic = 100 /lAde, ~ = 0) Collector Cutoff Current (VCB = 30 Vde, ~ = 0) (VCB =30Vde, ~ =0, TA = 150· C) Emitter Cutoff Current...


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