AM2312N Datasheet PDF

AM2300 : D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Top View of SOT-23 Ordering and Marking Information Ñb€ y • R ` VÛmw m A M2300 Package .co h c R : SOT23-3L e t o f Packing .go w Blank : Tube Packing A : Taping ww Package AM2300 : A0XXX XXX – Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±12 6 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. AX EL.

AM2300 : FEATURES The AM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  20V/4.0A, RDS(ON) =26mΩ(typ.)@VGS =4.5V  20V/3.0A, RDS(ON) =31mΩ(typ.)@VGS =2.5V  20V/2.0A, RDS(ON) =44mΩ(typ.)@VGS =1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package AP.

AM2300N : Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Low gate charge 7nC • High performance • High current handling • Miniature SOT-23 Surface Mount Package Saves Board Space AM2300N 2.5-V Rated PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 20 0.035 @ VGS = 4.5V 0.050 @ .

AM2301 : DHT21 ：DHT21 AM2301 DHT21 /AM2301 DHT21/AM2301 ► ►， ► ► ► ► ►4 ► DHT21 DHT21 。， 。NTC ，8。、 、、。DHT21 。OTP， 。， 。、，20， 。 4 。，。 ► ► ► ► ► ► ► ► ► ► ► www.aosong.com 1 DHT21 ：DHT21 AM2301 1、 Min Typ 0.1 16 ±1 ±3 Max %RH Bit %RH %RH %RH S S %RH %RH/yr ℃ 25℃ 0－50℃ 1 1/e(63%)25℃， 1m/s ±5 2 2 ±0.3 ±1 0.1 16 ±0.5 Bit ℃ ℃ ±1 ℃ -40 80 1/e(63%) 6 20 S 2、 ， 3、 205K,20 www.aosong.com 2 DHT21 ：DHT21 AM2301 3、 DHT215V。， 1s 。（VDD，GND）100nF ，。 4、 DATA DHT21,, 5ms ,,40bit,。 : 40bit=16bit+16bit+8bit ： 40bit： 0000 0010 1000 1100 0000 0001 0101 1111 1110 1110 8+8+8+8=8= ：0000 0010+1000 1100+0000 0001+0101 1111=1110 1110 =65.2％RH =35.1℃ 0℃1。 ：-10.1℃1.

AM2301 : Top View D -20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS= -4.5V RDS(ON)= 110mΩ (typ.) @ VGS= -2.5V z z Super High Dense Cell Design Reliable and Rugged G S SOT-23 S Applications z Power Management in Notebook Computer, € Portable Equipment and Battery `R•yÑb Powered Systems. G VÛmw w ww ot f o g . ec o h.c D P Channel MOSFET m Ordering and Marking Information A M2301 Package R : SOT23-3L Packing Packing Package Blank : Tube A : Taping AM2301 : A1XXX XXX – Date Code AM2301 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Notes： (TA=25°C Unless Otherwise Noted) Rating -20 ±12 -2.5 -10 -1.5 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 W °C/W V A A °C Par.

AM2301 : The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. FEATURES  -20V/-3.2A, RDS(ON)=90mΩ(typ.)@VGS =-4.5V  -20V/-2.0A, RDS(ON)=130mΩ(typ.)@VGS =-2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  This is a Green compliance  Available in a SOT-23 package. AM2301 i.

AM2301P : Analog Power P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives AM2301P VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 130 @ VGS = -4.5V 190 @ VGS = -2.5V ID (A) -2.6 -2.2 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -2.6 -2.1 -10 -1.8 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Tempe.

AM2301PE : Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2301PE PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.130 @ VGS = -4.5V -20 0.190 @ VGS = -2.5V G ID (A) -2.6 -2.1 ESD Protected.

AM2302 : Free Datasheet http://www.Datasheet4U.com AM2302 : AM2302 DHT22 AM2302 AM2302 ► ►， ► ► ► ► ►4 ► AM2302 AM2302 AM2302 。， 。NTC ，8。、 、、。AM2302 。OTP， 。， 。、，20 ， 。 4 。，。 ► ► ► ► ► ► ► ► ► ► www.aosong.com 1 Free Datasheet http://www.Datasheet4U.com AM2302 : AM2302 DHT22 ► 1、 Min Typ 0.1 16 ±0.3 ±2 Max %RH Bit %RH %RH %RH S S %RH %RH/yr ℃ 25℃ -20－80℃ ±2 2 5 ±0.3 ±0.5 0.1 16 ±0.2 1/e(63%)25℃， 1m/s Bit ℃ ℃ ±0.5 ℃ -40 80 1/e(63%) 6 20 S 2、 ， 3、 205K,20 AM2302。 www.aosong.com 2 Free Datasheet http://www.Datasheet4U.com AM2302 : AM2302 DHT22 3、 AM23023.3-6V。， 1s 。（VDD，GND）100nF ， 。 4、 DATA AM2302,, 5ms ,,40bit,。 : 40bit=16bit.

AM2302 : Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT-23 D Applications G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems om c . h ec Ordering and Markingo Information t .gof w ww AM2302 Ñb VÛmw`R•y € S N-Channel MOSFET Package R : SOT23-3L Packing Blank : Tube A : Taping Packing Package AM2302 : Note: A2XXX XXX - Date Code AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate terminaAXElite lead-free products meet or exceed the lead-free requirements tion finish; which are fully compliant with RoHS. of IPC/JEDEC .

AM2302 : AM2302 output calibrated digital signal. It applys exclusive digital-signal-collecting-technique and humidity sensing technology, assuring its reliability and stability. Its sensing elements is connected with 8-bit single-chip computer. Every sensor of this model is temperature compensated and calibrated in accurate calibration chamber and the calibration-coefficient is saved in type of programme in OTP memory, when the sensor is detecting, it will cite coefficient from memory. Small size & low consumption & long transmission distance(100m) enable AM2302 to be suited in all kinds of harsh application occasions. Single-row packaged with four pins, making the connection very convenient. 3. .

AM2302N : Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2302N VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 76 @ VGS = 4.5V 103 @ VGS = 2.5V ID(A) 3.4 3.0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID 3.4 2.7 IDM 10 IS 1.6 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating J.

AM2302NE : Analog Power AM2302NE N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 20 0.076 @ VGS = 4.5V 0.103 @ VGS = 2.5V • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology ESD Protected ID (A) 3.4 2.9 .

AM2303 : AM2303 output calibrated digital signal. It utilizes exclusive digital-signal-collecting-technique and humidity sensing technology, assuring its reliability and stability.Its sensing elements is connected with 8-bit single-chip computer. Every sensor of this model is temperature compensated and calibrated in accurate calibration chamber and the calibration-coefficient is saved in type of programme in OTP memory, when the sensor is detecting, it will cite coefficient from memory. Small size & low consumption & long transmission distance(20m) enable AM2303 to be suited in all kinds of harsh application occasions. Single-row packaged with four pins, making the connection very convenient. 3. Te.

AM2303 : The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications. The AM3401 is available in SOT-23 Package ORDERING INFORMATION Package Type SOT-23 Note E3 Part Number AM.

AM2303E3R : The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications. The AM3401 is available in SOT-23 Package ORDERING INFORMATION Package Type SOT-23 Note E3 Part Number AM.

AM2303E3VR : The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications. The AM3401 is available in SOT-23 Package ORDERING INFORMATION Package Type SOT-23 Note E3 Part Number AM.