DatasheetsPDF.com

AM2301

AXElite
Part Number AM2301
Manufacturer AXElite
Description P-Channel Enhancement Mode MOSFET
Published Jul 17, 2014
Detailed Description AM2301 P-Channel Enhancement Mode MOSFET Features z Pin Description Top View D -20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS...
Datasheet PDF File AM2301 PDF File

AM2301
AM2301

Overview
AM2301 P-Channel Enhancement Mode MOSFET Features z Pin Description Top View D -20V/-2.
5A, RDS(ON)= 85mΩ (typ.
) @ VGS= -4.
5V RDS(ON)= 110mΩ (typ.
) @ VGS= -2.
5V z z Super High Dense Cell Design Reliable and Rugged G S SOT-23 S Applications z Power Management in Notebook Computer, € Portable Equipment and Battery `R•yÑb Powered Systems.
G VÛmw w ww ot f o g .
ec o h.
c D P Channel MOSFET m Ordering and Marking Information A M2301 Package R : SOT23-3L Packing Packing Package Blank : Tube A : Taping AM2301 : A1XXX XXX – Date Code AM2301 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Notes： (TA=25°C Unless Otherwise Noted) Rating -20 ±12 -2.
5 -10 -1.
5 150 -55 to 150 TA=25°C TA=100°C 0.
83 0.
3 150 W °C/W V A A °C Parameter Drain-Source Voltage Gate-Source Voltage Continue Drain Current Pulsed Drain Current Diode continuous forward current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 2 Unit *Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) AM2301 Min.
Typ.
Max.
Test Condition Unit Static Characteristics € BVDSS Drain-Source Breakdown `R•yÑb Voltage IDSS VGS(th) IGSS RDS(ON) VSD ote f o g Gate Threshold Voltage w.
w w Gate Leakage Current Zero Gate Voltage Drain Current h.
c VÛmw m DS=-16V, VGS=0V V o VGS=0V, IDS=-250μA TJ=85°C VDS=VGS, IDS=-250μA -20 -1 -30 -0.
45 -0.
7 85 110 -0.
8 -1 ±100 130 190 -1.
3 V c μA V nA mΩ V VGS=±12V, VDS=0V VGS=-4.
5V, IDS=-2.
5A VGS=-2.
5V, IDS=-2A ISD=-0.
5A , VGS=0V Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics b Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=-10V, VGS=-4.
5V, IDS=-2.
5A 5 0.
7 0.
6 7 nC 2 Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.
1.
0 Sep.
06, 2010 AM2301 Electrical Characteristics (Cont.
) Symbol Parameter (TA=25...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)