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AM2300

AXElite
Part Number AM2300
Manufacturer AXElite
Description N-Channel Enhancement Mode MOSFET
Published Jul 17, 2014
Detailed Description AM2300 N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V...
Datasheet PDF File AM2300 PDF File

AM2300
AM2300

Overview
AM2300 N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=35mΩ(typ.
) @ VGS=10V RDS(ON)=45mΩ(typ.
) @ VGS=4.
5V RDS(ON)=115mΩ(typ.
) @ VGS=2.
5V Pin Description D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
Top View of SOT-23 Ordering and Marking Information Ñb€ y • R ` VÛmw m A M2300 Package .
co h c R : SOT23-3L e t o f Packing .
go w Blank : Tube Packing A : Taping ww Package AM2300 : A0XXX XXX – Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±12 6 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec.
AX EL I TE reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
1 AM2300 Absolute Maximum Ratings Cont.
Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.
25 0.
5 150 -55 to 150 100 W °C °C °C/W Unit Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a a (TA = 25°C unless otherwise noted) AM2300 Min.
Typ.
Max.
Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current V GS =0V , IDS=250 µ A V DS =16V , V GS =0V V DS =V GS , IDS=250 µ A 20 1 0.
5 35 45 115 0.
6 13 3 4.
5 6 12 10 40 20 1.
3 ± 100 50 60 125 1.
3 25 V µA V nA V SD Dynamic b Qg Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Ñ =10V , I =3.
5A •yV GS DS R ` Drain-Source On-state w V GS =4.
5V , IDS =2.
8A m Resistance VÛ V GS om , IDS=2A .
c=...


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