| Part Number | RN4989 |
| Manufacturer | Toshiba |
| Title | Silicon PNP/NPN Epitaxial Type Transistors |
| Description | RN4989 Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4989 1. Applications • Switching • In... |
| Features |
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Including two devices in US6 (ultra super mini type with 6 leads) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
3. Equivalent Circuit
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| File Size | 348.49KB |
| Datasheet |
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RN4020 : RN4020 Bluetooth® Low Energy Module Features • Fully certified Bluetooth® version 4.1 module • On-board Bluetooth Low Energy 4.1 stack • ASCII command interface API over UART • Device Firmware Upgrade (DFU) over UART or Over the Air (OTA) • Microchip Low-energy Data Profile (MLDP) for serial data applications • Remote commands over-the-air • 64 KB internal flash • Compact form factor: 11.5 x 19.5 x 2.5 mm • Castellated SMT pads for easy and reliable PCB mounting • Environmentally friendly, RoHS compliant • Certifications: FCC, IC, CE, QDID, VCCI, KCC, and NCC Operational • Single operating voltage: 1.8V to 3.6V (3.3V typical) • Temperature range: -30°C to 85°C • Low-power consumption • Simp.
RN41 : RN41/RN41N Class 1 Bluetooth® Module with EDR Support Features • Fully qualified Bluetooth® version 2.1 module, supports version 2.1 + Enhanced Data Rate (EDR) • ASCII command interface over UART • Postage-stamp sized form factor: - RN41: 13.4 x 25.8 x 2 mm - RN41N: 13.4 x 20 x 2 mm • Low-power (30 mA connected, 10 mA sniff mode) • UART (SPP or HCI) and USB (HCI only) data connection interfaces • Sustained SPP data rates: 240 Kbps (Slave mode), 300 Kbps (Master mode) • HCI data rates: 1.5 Mbps sustained, 3.0 Mbps burst in HCI mode • Embedded Bluetooth stack profiles include: GAP, SDP, RFCOMM, L2CAP protocols, with SPP, HID, and DUN profile support (does not require any host stack). • Blue.
RN4142XV-DS : RN4142XV-DS RN41XV & RN42XV Bluetooth Module Features: • Fully qualified Bluetooth® version 2.1 Class 1 (RN41XV) and Class 2 (RN42XV) data module, supports version 2.1 + Enhanced Data Rate (EDR) • Backwards-compatible with Bluetooth version 2.0, 1.2, and 1.1 • Pin compatible with widely used 2 x 10 2-mm socket typically used by 802.15.4 applications • RN42XV: 26 μA sleep, 3 mA connected, 30 mA transmit • RN41XV: 30 mA connected, 10 mA sniff mode • UART data connection interface • Supports secure simple pairing (SPP) • Sustained data rates: 240 Kbps (slave), 300 Kbps (master) • Embedded Bluetooth stack profiles: SPP and HID profile support as well as GAP, SDP, RFCOMM, and L2CAP protocols .
RN41N : RN41/RN41N Class 1 Bluetooth® Module with EDR Support Features • Fully qualified Bluetooth® version 2.1 module, supports version 2.1 + Enhanced Data Rate (EDR) • ASCII command interface over UART • Postage-stamp sized form factor: - RN41: 13.4 x 25.8 x 2 mm - RN41N: 13.4 x 20 x 2 mm • Low-power (30 mA connected, 10 mA sniff mode) • UART (SPP or HCI) and USB (HCI only) data connection interfaces • Sustained SPP data rates: 240 Kbps (Slave mode), 300 Kbps (Master mode) • HCI data rates: 1.5 Mbps sustained, 3.0 Mbps burst in HCI mode • Embedded Bluetooth stack profiles include: GAP, SDP, RFCOMM, L2CAP protocols, with SPP, HID, and DUN profile support (does not require any host stack). • Blue.
RN41XV : RN4142XV-DS RN41XV & RN42XV Bluetooth Module Features: • Fully qualified Bluetooth® version 2.1 Class 1 (RN41XV) and Class 2 (RN42XV) data module, supports version 2.1 + Enhanced Data Rate (EDR) • Backwards-compatible with Bluetooth version 2.0, 1.2, and 1.1 • Pin compatible with widely used 2 x 10 2-mm socket typically used by 802.15.4 applications • RN42XV: 26 μA sleep, 3 mA connected, 30 mA transmit • RN41XV: 30 mA connected, 10 mA sniff mode • UART data connection interface • Supports secure simple pairing (SPP) • Sustained data rates: 240 Kbps (slave), 300 Kbps (master) • Embedded Bluetooth stack profiles: SPP and HID profile support as well as GAP, SDP, RFCOMM, and L2CAP protocols .
RN42 : RN42/RN42N Class 2 Bluetooth® Module with EDR Support Features • Fully qualified Bluetooth® version 2.1 module, supports version 2.1 + Enhanced Data Rate (EDR) • ASCII command interface over UART • Postage-stamp-sized form factor: - RN42: 13.4 x 25.8 x 2.4 mm - RN42N: 13.4 x 20.5 x 2.4 mm • Low-power (26 A sleep, 3 mA connected, 30 mA transmit) • UART (SPP or HCI) and USB (HCI only) data connection interfaces • Sustained SPP data rates: 240 Kbps (Slave mode), 300 Kbps (Master mode) • HCI data rates: 1.5 Mbps sustained, 3.0 Mbps burst in HCI mode • Embedded Bluetooth stack profiles include: GAP, SDP, RFCOMM, L2CAP protocols, with SPP, HID, and DUN profile support (does not require any host.
RN42N : RN42/RN42N Class 2 Bluetooth® Module with EDR Support Features • Fully qualified Bluetooth® version 2.1 module, supports version 2.1 + Enhanced Data Rate (EDR) • ASCII command interface over UART • Postage-stamp-sized form factor: - RN42: 13.4 x 25.8 x 2.4 mm - RN42N: 13.4 x 20.5 x 2.4 mm • Low-power (26 A sleep, 3 mA connected, 30 mA transmit) • UART (SPP or HCI) and USB (HCI only) data connection interfaces • Sustained SPP data rates: 240 Kbps (Slave mode), 300 Kbps (Master mode) • HCI data rates: 1.5 Mbps sustained, 3.0 Mbps burst in HCI mode • Embedded Bluetooth stack profiles include: GAP, SDP, RFCOMM, L2CAP protocols, with SPP, HID, and DUN profile support (does not require any host.
RN42XV : RN4142XV-DS RN41XV & RN42XV Bluetooth Module Features: • Fully qualified Bluetooth® version 2.1 Class 1 (RN41XV) and Class 2 (RN42XV) data module, supports version 2.1 + Enhanced Data Rate (EDR) • Backwards-compatible with Bluetooth version 2.0, 1.2, and 1.1 • Pin compatible with widely used 2 x 10 2-mm socket typically used by 802.15.4 applications • RN42XV: 26 μA sleep, 3 mA connected, 30 mA transmit • RN41XV: 30 mA connected, 10 mA sniff mode • UART data connection interface • Supports secure simple pairing (SPP) • Sustained data rates: 240 Kbps (slave), 300 Kbps (master) • Embedded Bluetooth stack profiles: SPP and HID profile support as well as GAP, SDP, RFCOMM, and L2CAP protocols .
RN4601 : RN4601 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4601 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 4.7kΩ R2: 4.7kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Q2 Absolute Maximum Rati.
RN4602 : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4602 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4602 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 10kΩ R2: 10kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur.
RN4603 : RN4603 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4603 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Q2 Absolute Maximum Rating.
RN4604 : RN4604 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4604 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 47kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015g (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO.
RN4605 : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4605 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4605 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 2.2kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO.
RN4606 : RN4606 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 4.7kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015g (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCE.
RN4607 : TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4607 Unit: mm １ Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 10kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −6 −100 Q2 Absolute Maximum Ratings.
RN4608 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4608 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEB.
RN4609 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4609 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 47kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −15 −100 JEDEC ― JEITA ― TOSHIBA .