G30

G3000TF250 : Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Maximum continuos DC-link voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage MAXIMUM LIMITS 2500 2500 1250 18 18 UNITS V V V V V ITGQ Ls IT(AV)M IT(RMS) ITSM ITSM2 I2t di/dtcr PFGM PRGM IFGM VRGM Tj op Tstg RATINGS Peak turn-off current, (note 2) Snubber loop inductance, ITM=ITGQ, (note 2) Mean on-state current, Tsink=55°C (note 3) Nominal RMS on-state current, Tsink=25°C (note 3) Peak non-repetitive su.

G3000TF450 : Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Maximum continuos DC-link voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage MAXIMUM LIMITS 4500 4500 2800 18 18 UNITS V V V V V ITGQ Ls IT(AV)M IT(RMS) ITSM ITSM2 I2t di/dtcr PFGM PRGM IFGM VRGM Tj op Tstg RATINGS Peak turn-off current, (note 2) Snubber loop inductance, ITM=ITGQ, (note 2) Mean on-state current, Tsink=55°C (note 3) Nominal RMS on-state current, 25°C (note 3) Peak non-repetitive surge cu.

G3018 : Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperat.

G3018K : Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±20 640 500 950 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V mA mA mA.

G301K : Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±16 640 500 950 1.38 0.01 -55 ~ +150 Value 90 Unit V V mA mA mA W.

G30FG : NV, G–LOW CURRENT HIGH VOLTAGE RECTIFIERS HVCA Number Repetitive Peak Reverse Voltage VRRM V (Volts) Avg. Forward Current Max. IFAVM@55°C mA (milliAmps) Max. Forward Voltage Drop VF@10ma V (Volts) Max. Reverse Current IR@VRRM@25°C mA (microAmps) NV • FP-Subminiature 100 nsec Rectifier NV20FP 2000 20 10 0.02 NV30FP 3000 20 10 0.02 NV40FP 4000 20 10 0.02 NV50FP 5000 20 10 0.02 G • FS-Miniature 100 nsec High Voltage Rectifier G2FS 2000 25 15 0.20 G3FS 3000 25 15 0.20 G4FS 4000 25 15 0.20 G5FS 5000 25 15 0.20 G6FS 6000 25 18 0.20 G7FS 7000 25 18 0.20 G8FS 8000 25 25 0.20 G10FS 10000 25 25 0.20 G12FS 12000 10 35 0.20 G15FS 15000 10 35 .

G30FP : HVGT G30FP 30kV 10mA HIGH VOLTAGE DIODES G30FP is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Features High speed switching High Current High surge resisitivity for CRT discharge High reliability design High Voltage Applications X light Power supply Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings Outline Drawings : mm Lot No. Cathode Mark o 3.0 o 0.6 27 min. 12 27 min. DO-312 Cathode Mark Type Mark G30FP Items Symbols Condition Repetitive Peak Renerse Voltage V RRM Average Output Current IO Ta=25°C,Resistiv.

G30FP : NV, G–LOW CURRENT HIGH VOLTAGE RECTIFIERS HVCA Number Repetitive Peak Reverse Voltage VRRM V (Volts) Avg. Forward Current Max. IFAVM@55°C mA (milliAmps) Max. Forward Voltage Drop VF@10ma V (Volts) Max. Reverse Current IR@VRRM@25°C mA (microAmps) NV • FP-Subminiature 100 nsec Rectifier NV20FP 2000 20 10 0.02 NV30FP 3000 20 10 0.02 NV40FP 4000 20 10 0.02 NV50FP 5000 20 10 0.02 G • FS-Miniature 100 nsec High Voltage Rectifier G2FS 2000 25 15 0.20 G3FS 3000 25 15 0.20 G4FS 4000 25 15 0.20 G5FS 5000 25 15 0.20 G6FS 6000 25 18 0.20 G7FS 7000 25 18 0.20 G8FS 8000 25 25 0.20 G10FS 10000 25 25 0.20 G12FS 12000 10 35 0.20 G15FS 15000 10 35 .

G30FS : G30FS 30KV, 25mA, Fast Recovery High Voltage Rectifier Features • Fast reverse recovery time for high efficiency • Molded plastic body, ANSI/UL94 V-0 rated material • RoHS compliant to Directive 2011/65/EC, Article 4(1), Annex II; Annex III, 7(a) Device Electrical Characteristics ( 25°C ambient temperature unless stated otherwise) Maximum Repetitive Peak Reverse Voltage Average Forward Current maximum Maximum Forward Voltage Drop Maximum Surge Current rating Maximum Reverse Current Maximum Reverse Recovery Time Typical Junction Capacitance Maximum Junction Temperature Storage Temperature range Conditions TA = 55°C IF = 25mA 8.3msec, half sine at rated VRRM IF= 20mA, IR= 40mA, IRR= 10mA f =.

G30GE : NV, G–LOW CURRENT HIGH VOLTAGE RECTIFIERS HVCA Number Repetitive Peak Reverse Voltage VRRM V (Volts) Avg. Forward Current Max. IFAVM@55°C mA (milliAmps) Max. Forward Voltage Drop VF@10ma V (Volts) Max. Reverse Current IR@VRRM@25°C mA (microAmps) NV • FP-Subminiature 100 nsec Rectifier NV20FP 2000 20 10 0.02 NV30FP 3000 20 10 0.02 NV40FP 4000 20 10 0.02 NV50FP 5000 20 10 0.02 G • FS-Miniature 100 nsec High Voltage Rectifier G2FS 2000 25 15 0.20 G3FS 3000 25 15 0.20 G4FS 4000 25 15 0.20 G5FS 5000 25 15 0.20 G6FS 6000 25 18 0.20 G7FS 7000 25 18 0.20 G8FS 8000 25 25 0.20 G10FS 10000 25 25 0.20 G12FS 12000 10 35 0.20 G15FS 15000 10 35 .

G30H120CTW : TRENCH SCHOTTKY RECTIFIER Green G30H120CTW REVERSE VOLTAGE – 120 Volts FORWARD CURRENT – 30 Amperes FEATURES • High junction temperature capability • Negligible switching losses • Good trade off between leakage current and forward voltage drop • Qualification is according to AEC-Q101 Rev_D • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) APPLICATION • High frequency miniature switch mode of adaptors • On-board DC-DC converters • Use in high frequency inverters MECHANICAL DATA • Package: JEDEC TO-220AB • Package Material: “Green” molding compound, UL flammability classification 94V-0,“Halogen-free” • Lead Free Finish, RoHS Compliant • Pol.

G30H603 : 2 Table of Contents . 3 Maximum ratings . . 4 Thermal Resistance . . 4 Electrical Characteristics . .

G30M65DF2 : This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGP30M65DF2 Table 1: Device summary Marking Package G30M65DF2 TO-220 Packaging Tube April 2017 DocID027355 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents Contents STGP30M65DF2 1 Electrical ratings .....

G30N60A4D : HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has b.

G30N60B3 : HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Features • 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A • Typical Fall Time. . 90ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49170. Ordering Information PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3 Packaging .

G30N60B3D : HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction lo.