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G3018

GTM
Part Number G3018
Manufacturer GTM
Description N-CHANNEL MOSFET
Published Sep 18, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 Description Features N-CHANN...
Datasheet PDF File G3018 PDF File

G3018
G3018

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 Description Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance.
Fast switching speed.
Low voltage drive (2.
5V) makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 20 115 75 800 0.
225 0.
0018 -40 ~ +150 Ratings 556 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W G3018 Page: 1/4 ISSUED DATE :2005/11/30 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Unless otherwise specified) Min.
30 0.
8 20 Typ.
5 7 Max.
2.
0 ±1 1 8 13 50 25 5 pF Unit V V mS uA uA Test Conditions VGS=0, ID=250uA VDS=VGS, ID=0.
1mA VDS=3V, ID=10mA VGS= ±20V VDS=30V, VGS=0 VGS=4V, ID=10mA VGS=2.
5V, ID=1mA VGS=0V VDS=5V f=1.
0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Ciss Coss Crss Symbol VSD Source-Drain Diode Parameter Forward On Voltage2 Min.
Typ.
0.
84 Max.
1.
5 Unit V Test Conditions IS=100mA, VGS=0V Notes: 1.
Pulse width limited by Max.
junction temperature.
2.
Pulse width 300us, duty cycle 2%.
3.
Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min.
co...


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