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G301K

GTM
Part Number G301K
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 18, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE PO...
Datasheet PDF File G301K PDF File

G301K
G301K

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 1 640mA The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The G301K is universally used for all commercial-industrial applications.
Description Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±16 640 500 950 1.
38 0.
01 -55 ~ +150 Value 90 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W G301K Page: 1/4 ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
30 0.
5 Typ.
0.
06 600 1 0.
5 0.
5 12 10 56 29 32 8 6 Max.
1.
5 ±10 1 100 1 2 3 1.
6 50 pF ns nC Unit V V/ V mS uA uA uA Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=600mA VGS= ±16V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=500mA VGS=4.
5V, ID=400mA VGS=2.
7V, ID=200mA ID=600mA VDS=50V VGS=4.
5V VDS=30V ID=600mA VGS=10V RG=3.
3 RD=52 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source O...


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