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ARF648

Power Semiconductors
Part Number ARF648
Manufacturer Power Semiconductors
Description FAST RECOVERY DIODE
Published Mar 24, 2005
Detailed Description ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6...
Datasheet PDF File ARF648 PDF File

ARF648
ARF648

Overview
ANSALDO Ansaldo Trasporti s.
p.
a.
Unita' Semiconduttori Via N.
Lorenzi 8 - I 16152 GENOVA - ITALY Tel.
int.
+39/(0)10 6556549 - (0)10 6556488 Fax Int.
+39/(0)10 6442510 Tx 270318 ANSUSE I - FAST RECOVERY DIODE ARF648 Repetitive voltage up to Mean forward current Surge current 2500 V 2510 A 30 kA FINAL SPECIFICATION feb 00 - ISSUE : 01 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 2500 2600 100 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 150 2510 2570 30 4500 x1E3 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F Forward current = 1500 A 25 150 150 1,4 0,85 0,300 SWITCHING t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery I F = 1000 A di/dt= VR = 250 A/µs 50 V 150 5,0 1000 600 0,5 µs µC A di/dt= 100 A/µs 150 4 V MOUNTING R th(j-h) T F j Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 14 -30 / 150 35.
0 / 40.
0 850 °C/kW °C kN g ORDERING INFORMATION : ARF648 S 25 standard specification VRRM/100 ARF648 FAST RECOVERY DIODE FINAL SPECIFICATION feb 00 - ISSUE : 01 ANSALDO FORWARD CHARACTERISTIC Tj = 150 °C SURGE CHARACTERISTIC Tj = 150 °C 8000 7000 6000 Forward Current [A] 5000 ITSM [kA] 0,6 1,1 1,6 2,1 2,6 3,1 3,6 35 30 25 20 15 10 5 0 1 10 n° cycles 100 Forward Voltage [V] 4000 3000 2000 1000 0 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16,0 14,0 12,0 Zth j-h [°C/kW] 10,0 8,0 6,0 4,0 2,0 0,0 0,001 0,01 0,1 t[s] 1 10 100 Distributed by All the characteris...


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