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ARF673

Power Semiconductors
Part Number ARF673
Manufacturer Power Semiconductors
Description FAST RECOVERY DIODE
Published Mar 24, 2005
Detailed Description POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +3...
Datasheet PDF File ARF673 PDF File

ARF673
ARF673

Overview
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N.
Lorenzi 8, 16152 Genova - ITALY Tel.
+39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel.
+39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION mar 03 - ISSUE : 2 ARF673 Repetitive voltage up to Mean forward current Surge current 4500 V 990 A 15 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 4500 4600 80 2500 V V mA V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = =2500 A 125 990 1030 15 1125 x1E3 125 125 125 3.
82 1.
70 0.
850 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr s E V OFF FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= di/dt= VR = 2100 A 1100 A/µs 1800 V 125 2300 1300 1 6 µs µC A J V di/dt= 400 A/µs 125 38 MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 18 6 -30 / 125 22.
0 / 24.
5 300 °C/kW °C/kW °C kN g ORDERING INFORMATION : ARF673 S 45 standard specification VRRM/100 ARF673 FAST RECOVERY DIODE TARGET SPECIFICATION mar 03 - ISSUE : 2 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 125 °C 3500 3000 2500 ITSM [kA] 2000 1500 1000 500 0 0.
6 1.
6 2.
6 Forward Vol...


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