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ASAT15

Part Number	ASAT15
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 24, 2005
Detailed Description	ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x...
Datasheet	ASAT15 PDF File

Overview

ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for PACKAGE STYLE .
250 2L FLG(A) .
020 x 45° A Ø .
130 NOM.
.
050 x 45° FEATURES: • • • Omnigold™ Metalization System D C L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O K 3.
0 A 45 V 15 V 3.
0 V 37.
2 W -65 OC to +200 OC -65 C to +150 C 4.
7 OC/W O DIM A B C D E F G H I J K L M MINIMUM inches / mm MAXIMUM inches / mm .
055 / 1.
40 .
124 / 3.
15 .
243 / 6.
17 .
635 / 16.
13 .
555 / 14.
10 .
739 / 18.
77 .
315 / 8.
00 .
002 / 0.
05 .
055 / 1.
40 .
075 / 1.
91 .
245 / 6.
22 .
092 / 2.
34 .
065 / 1.
65 .
253 / 6.
43 .
665 / 16.
89 .
565 / 14.
35 .
749 / 19.
02 .
325 / 8.
26 .
006 / 0.
15 .
065 / 1.
65 .
095 / 2.
41 .
190 / 4.
83 .
255 / 6.
48 O ORDER CODE: ASI10518 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO hFE COB PG ηC TC = 25 C NONETEST CONDITIONS IC = 5.
0 mA IC = 5.
0 mA IE = 5.
0 mA VCE = 5.
0 V VCB = 28 V VCE = 28 V POUT = 15 W IC = 1.
0 A f = 1.
0 MHz f = 1.
65 GHz MINIMUM TYPICAL MAXIMUM 45 12 3.
0 15 150 12 9.
2 45 UNITS V V V --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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