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ASAT25

Part Number	ASAT25
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 24, 2005
Detailed Description	ASAT25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT25 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x...
Datasheet	ASAT25 PDF File

Overview

ASAT25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT25 is Designed for PACKAGE STYLE .
250 2L FLG(A) .
020 x 45° A Ø .
130 NOM.
.
050 x 45° FEATURES: • • • Omnigold™ Metalization System D C L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.
6 A 45 V 12 V 3.
0 V 50 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 3.
5 OC/W O O DIM A B C D E F G H I J K L M .
245 / 6.
22 .
092 / 2.
34 .
243 / 6.
17 .
635 / 16.
13 .
555 / 14.
10 .
739 / 18.
77 .
315 / 8.
00 .
002 / 0.
05 .
055 / 1.
40 .
075 / 1.
91 MINIMUM inches / mm K MAXIMUM inches / mm .
055 / 1.
40 .
124 / 3.
15 .
065 / 1.
65 .
253 / 6.
43 .
665 / 16.
89 .
565 / 14.
35 .
749 / 19.
02 .
325 / 8.
26 .
006 / 0.
15 .
065 / 1.
65 .
095 / 2.
41 .
190 / 4.
83 .
255 / 6.
48 ORDER CODE: ASI10520 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO hFE PG ηC IC = 6 mA IC = 6 mA IE = 6 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 45 12 3.
0 UNITS V V V VCE = 5.
0 V VCC = 28 V GHz IC = 1.
2 A POUT = 25 W f = 1.
65 15 9.
0 50 150 --dB % A D...

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