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AT-41435

Part Number	AT-41435
Manufacturer	Agilent(Hewlett-Packard)
Description	Up to 6 GHz Low Noise Silicon Bipolar Transistor
Published	Mar 24, 2005
Detailed Description	Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical a...
Datasheet	AT-41435 PDF File

Overview

Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.
7 dB Typical at 2.
0␣ GHz 3.
0 dB Typical at 4.
0␣ GHz • High Associated Gain: 14.
0 dB Typical at 2.
0␣ GHz 10.
0 dB Typical at 4.
0␣ GHz • High Gain-Bandwidth Product: 8.
0 GHz Typical fT • Cost Effective Ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications.
This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω at 1 GHz, makes this device easy to use as a low noise amplifier.
The AT-41435 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability are produced by the use of ionimplant...

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