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AT-41470

Part Number	AT-41470
Manufacturer	Agilent(Hewlett-Packard)
Description	Up to 6 GHz Low Noise Silicon Bipolar Transistor
Published	Mar 24, 2005
Detailed Description	Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical a...
Datasheet	AT-41470 PDF File

Overview

Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.
6 dB Typical at 2.
0␣ GHz 3.
0 dB Typical at 4.
0␣ GHz • High Associated Gain: 14.
5 dB Typical at 2.
0␣ GHz 10.
5 dB Typical at 4.
0␣ GHz • High Gain-Bandwidth Product: 8.
0 GHz Typical fT • Hermetic, Gold-ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications.
This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω at 1 GHz , makes this device easy to use as a low noise amplifier.
The AT-41470 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.
70 mil Package Description Hewlett-Packard’s AT-41470 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.
The AT-41470 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package.
The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.
The 14 emitter 4-119 5965-8927E AT-41470 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.
5 20 12 60 500 200 -65 to 200 Thermal Resistance [2,4]: θjc = 175°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 5.
7 mW/°C for TC > 113°C.
4.
The small spot size of this technique resul...

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