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HM62W4100H

Part Number	HM62W4100H
Manufacturer	Hitachi Semiconductor
Description	4M High Speed SRAM (1-Mword x 4-bit)
Published	Mar 26, 2005
Detailed Description	HM62W4100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W410...
Datasheet	HM62W4100H PDF File

Overview

HM62W4100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-774D (Z) Rev.
1.
0 Sep.
15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.
It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.
It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.
The HM62W4100H is packaged in 400-mil 32-pin SOJ for high density surface mounting.
Features • Single supply : 3.
3 V ± 0.
3 V • Access time 12/15 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current : 180/160 mA (max) • TTL standby current : 60/50 mA (max) • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version) • Data retension current : 0.
6 mA (max) (L-version) • Data retension voltage: 2 V (m...

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HM62W4100H 4M High Speed SRAM (1-Mword x 4-bit) - Hitachi Semiconductor
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