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HM62W4100HC

Part Number	HM62W4100HC
Manufacturer	Hitachi Semiconductor
Description	4M High Speed SRAM (1-Mword x 4-bit)
Published	Mar 26, 2005
Detailed Description	HM62W4100HC Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-1202 (Z) Preliminary Rev. 0.0 Sep. 28, 2000 Description...
Datasheet	HM62W4100HC PDF File

Overview

HM62W4100HC Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-1202 (Z) Preliminary Rev.
0.
0 Sep.
28, 2000 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.
It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.
The HM62W4100HC is packaged in 400-mil 32-pin SOJ for high density surface mounting.
Features • Single supply : 3.
3 V ± 0.
3 V • Access time : 10 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current : 115 mA (max) • TTL standby current : 40 mA (max) • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version) • Data retension current : 0.
6 mA (max) (L-version) • Data retension voltage: 2 V (min) (L-vers...

Similar Datasheet

HM62W4100H 4M High Speed SRAM (1-Mword x 4-bit) - Hitachi Semiconductor
HM62W4100HC 4M High Speed SRAM (1-Mword x 4-bit) - Hitachi Semiconductor

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