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BAR80

Siemens Semiconductor Group
Part Number BAR80
Manufacturer Siemens Semiconductor Group
Description Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
Published Mar 26, 2005
Detailed Description BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt i...
Datasheet PDF File BAR80 PDF File

BAR80
BAR80

Overview
BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55.
.
.
+125 -55.
.
.
+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group 1 Edition A02, 27.
02.
95 BAR 80 Electrical characteristics at TA = 25 °C, unless otherwise specified.
Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capac...


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