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BAR80

Infineon Technologies AG
Part Number BAR80
Manufacturer Infineon Technologies AG
Description Silicon RF Switching Diode
Published Mar 26, 2005
Detailed Description BAR80 Silicon RF Switching Diode  Design for use in shunt configuration  High shunt signal isolation  Low shunt inser...
Datasheet PDF File BAR80 PDF File

BAR80
BAR80

Overview
BAR80 Silicon RF Switching Diode  Design for use in shunt configuration  High shunt signal isolation  Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking AAs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 35 100 150 -55 .
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125 -55 .
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150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-17-2001 BAR80 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, ...


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