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BAR81

Siemens Semiconductor Group
Part Number BAR81
Manufacturer Siemens Semiconductor Group
Description Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
Published Mar 26, 2005
Detailed Description BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation...
Datasheet PDF File BAR81 PDF File

BAR81
BAR81

Overview
BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss Type BAR 81 Marking Ordering Code BBs Q62702Q62702-A1145 Pin Configuration 1=C 2=A 3=C 4=A Package MW-4 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 .
.
.
+ 125 - 55 .
.
.
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit IR 0.
93 20 nA V 1 VR = 20 V, TA = 25 °C Forward voltage ...


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