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BAS678

NXP
Part Number BAS678
Manufacturer NXP
Description High-speed diode
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS678 High-speed diode Product specification Supersedes data...
Datasheet PDF File BAS678 PDF File

BAS678
BAS678

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS678 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Philips Semiconductors Product specification High-speed diode FEATURES • Small plastic SMD package • High switching speed: max.
6 ns • Continuous reverse voltage: max.
80 V • Repetitive peak reverse voltage: max.
100 V • Repetitive peak forward current: max.
600 mA.
APPLICATIONS • High-speed switching in hybrid thick and thin-film circuits.
3 Marking code: L52.
BAS678 DESCRIPTION The BAS678 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package.
PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode handbook, halfpage 2 1 2 n.
c.
3 MAM185 1 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed-circuit board.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1.
7 250 +150 150 A A A mW °C °C see Fig.
2; note 1 CONDITIONS MIN.
− − − − MAX.
100 80 250 600 V V mA mA UNIT 1996 Sep 10 2 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.
5 VR = 10 V VR = 75 V VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.
6 when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA; see Fig.
7 when switched from IF = 10 mA; tr = 20 ns; see Fig.
8 − − − − − 15 100 50 2...


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