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BAS69

STMicroelectronics
Part Number BAS69
Manufacturer STMicroelectronics
Description Low capacitance small signal Schottky diodes
Published May 31, 2010
Detailed Description BAS69 Low capacitance small signal Schottky diodes Features ■ Low diode capacitance BAS69KFILM (Single) ■ Designed ...
Datasheet PDF File BAS69 PDF File

BAS69
BAS69

Overview
BAS69 Low capacitance small signal Schottky diodes Features ■ Low diode capacitance BAS69KFILM (Single) ■ Designed for RF applications ■ Low profile packages t(s) ■ Very low parasitic inductor and resistor uc Description rod ) The BAS69 series use 15V barrier, with extremely P t(s low junction capacitance, suitable for the detection of an RF signal and the compensation lete uc of the voltage drift with the temperature.
The d presented packages make the device ideal in so ro applications where space saving is critical.
b P The low junction capacitance will reduce the - O te disturbance on the RF signal.
SOD-523 SOT-323 BAS69WFILM (Single) BAS69-05WFILM (Common cathode) BAS69-06WFILM (Common anode) BAS69-04WFILM (Series) ct(s) bsole BAS69-07P6FILM u O (2 parallel diodes) Prod t(s) - SOT-666 BAS69-09P6FILM (2 opposite diodes) lete duc Configurations in top view bso Pro Table 1.
Device summary O te Symbol ole IF bs VRRM O C (typ) Value 10 mA 15 V < 1 pF Tj (max) 150 °C October 2009 Doc ID 12565 Rev 2 1/9 www.
st.
com 9 Characteristics 1 Characteristics BAS69 Table 2.
Symbol Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Parameter Value Unit VRRM IF IFSM Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Half wave, single phase 60 Hz 15 V 10 mA 2 A Tstg Storage temperature range ) Tj Maximum operating junction temperature (1) t(s TL Maximum soldering temperature(1) c 1.
Pulse test: tp = 380 µs, δ < 2 % du Table 3.
Thermal parameters -65 to +150 150 260 Pro t(s) Symbol Parameter Value lete uc Rth(j-a) Junction to ambient(1) SOT-323 550 SOD-523, SOT-666 600 so rod 1.
Epoxy printed circuit board with recommended pad layout b P Table 4.
Static electrical characteristics - O te Symbol Parameter Test conditions Min.
Typ Max.
t(s) ole Tj = 25 °C sVR = 1 V c b IR(1) Tj = 125 °C Reverse leakage current u O Tj = 25 °C d - VR = 15 V ro )Tj = 125 °...


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