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AM80814-005

STMicroelectronics
Part Number AM80814-005
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER...
Datasheet PDF File AM80814-005 PDF File

AM80814-005
AM80814-005


Overview
AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 5.
0 W MIN.
WITH 8.
5 dB GAIN .
310 x .
310 2LFL (S064) hermetically sealed ORDER CODE AM80814-005 BRANDING 80814-5 DESCRIPTION The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.
Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM80814-005 is supplied in the IMPAC™ Hermeti c M etal/ Ceramic package with internal Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter PIN CONNECTION 1.
Collector 2.
Base 3.
Emitter 4.
Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 23 1.
0 28 250 - 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation 6.
5 °C/W August 1992 1/5 AM80814-005 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Value Symbol Test Conditions Min.
Typ.
Max.
Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 250mA 48 3.
5 48 — 30 — — — — — — — — 500 300 V V V mA — Test Conditions Min.
Value Typ.
Max.
Unit POUT ηc GP Note: f = 850 — 1400MHz f = 850 — 1400MHz f = 850 — 1400MHz = = 120 µ S 4% PIN = 0.
7W PIN = 0.
7W PIN = 0.
7W VCC = 28V VCC = 28V VCC = 28V 5.
0 35 8.
5 5.
7 40 9.
0 — — — W % dB Pulse W idth Duty Cycle TYPICAL PERFORMANCE POWER OUTPUT & CO...


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