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AM80814-025

STMicroelectronics
Part Number AM80814-025
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METAL...
Datasheet PDF File AM80814-025 PDF File

AM80814-025
AM80814-025

Overview
AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .
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PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN.
WITH 7.
0 dB GAIN .
400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM80814-025 BRANDING 80814-25 PIN CONNECTION DESCRIPTION AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications.
This device is capable of operation over a broad range of pulse widths and duty cycles.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM80814-025 is supplied in the industry-standard AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
Collector 2.
Base 3.
Emitter 4.
Base PDISS IC VCC TJ TSTG Power Dissipation*(TC ≤ 75˚C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 75 3.
5 38 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.
3 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM80814-025 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min.
Typ.
Max.
Unit BVCBO BVEBO BVCER ICES hFE IC = 10mA IE = 1mA IC = 20mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 1A 55 3.
5 55 — 15 — — — — — — — — 5 150 V V V mA — DYNAMIC Value Symbol Test Conditions Min.
Typ.
Max.
Unit POUT ηc GP Note: f = 850 — 1400MHz f = 850 — 1400MHz f = 850 — 1400MHz = = 120 µ S 4% PIN = 5.
0W PIN = 5.
0W PIN = 5.
0W VCC = 35V VCC = 35V VCC = 35V 25 38 7.
0 — — — — — — W % dB Pulse Width Duty Cycle PACKAGE MECHANICAL DATA 2/3 AM80814-025 Information furnished is believed to be accurate and reliable.
However, SGS-THOMSON Microelectronics assume...


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