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2SD965 Datasheet PDF

Panasonic Semiconductor
Part Number 2SD965
Manufacturer Panasonic Semiconductor
Title Silicon NPN Transistor
Description Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Fe...
Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 40 20 7 8 ...

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2SD0592A : www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 750 150 −55 to +150 Unit V V 2.3±0.2 0.45+0.15 –0.1 2.5+0.6 .

2SD0601 : Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 60 50 7 200 100 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 1.1 –0.1 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector cu.

2SD0601A : Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 50 7 200 100 200 150 –55 ~ +150 Unit V.

2SD0602 : Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO .

2SD0602A : Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO .

2SD0638 : www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * 1.0±0.1 (0.85) 2.4±0.2 0.45±0.05 VCBO VCEO VEBO IC ICP PC Tj Tstg 30 25 7 0.5 1 600 150 −55 to +150 V V V A A mW °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 Symbol Rating Unit 0.55±0.1 1: Base 2: Collector .

2SD0662 : www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 .

2SD0662B : www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 .

2SD0814 : Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 0.95 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.45 1.1 –0.1 +0.2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V.

2SD0814A : www.DataSheet4U.net Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 2 Unit: mm 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Co.

2SD0874 : www.DataSheet4U.net Transistors 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 4.5±0.1 1.6±0.2 1.5±0.1 Unit: mm 4.0+0.25 –0.20 2.5±0.1 3˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0874 2SD0874A VCEO VEBO IC ICP * 1.0+0.1 –0.2 0.4±0.08 1.5±0.1 3 2 0.5±0.08 0.4±0.04 Symbol VCBO Ratin.

2SD0874A : www.DataSheet4U.net Transistors 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 4.5±0.1 1.6±0.2 1.5±0.1 Unit: mm 4.0+0.25 –0.20 2.5±0.1 3˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0874 2SD0874A VCEO VEBO IC ICP * 1.0+0.1 –0.2 0.4±0.08 1.5±0.1 3 2 0.5±0.08 0.4±0.04 Symbol VCBO Ratin.

2SD0875 : www.DataSheet4U.net Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) ■ Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.4±0.08 1.5±0.1 3˚ 0.4 max. 2.6±0.1 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25 –0.20 2.5±0.1 1.0+0.1 –0.2 3 2 0.5±0.08 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curren.

2SD0946 : www.DataSheet4U.net Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver. φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage 2SD0946 (Base open) 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipat.

2SD0946A : www.DataSheet4U.net Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver. φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage 2SD0946 (Base open) 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipat.

2SD0946B : www.DataSheet4U.net Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver. φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage 2SD0946 (Base open) 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipat.

2SD0958 : www.DataSheet4U.net Transistors 2SD0958 (2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 3.5±0.1 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 120 7 20 50 400 150 −55 to +150 Unit V V V mA mA mW °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.55±0.1 2.4±0.2 0.45±0.05 1: Base 2: Coll.




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