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2SD968

Panasonic Semiconductor
Part Number 2SD968
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planer type Transistor
Published Mar 30, 2005
Detailed Description Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2S...
Datasheet PDF File 2SD968 PDF File

2SD968
2SD968

Overview
Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm s Features q q q 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 1.
0–0.
2 +0.
1 High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
(Ta=25˚C) Ratings 100 120 100 120 5 1 0.
5 * 2.
6±0.
1 0.
4max.
45° 0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 4.
0–0.
20 0.
4±0.
04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD968 2SD968A 2SD968 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol Unit V 3 2 1 marking emitter voltage 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package 1 150 –55 ~ +150 Marking symbol : W(2SD968) V(2SD968A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SD968 2SD968A (Ta=25˚C) Symbol VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 100 120 5 90 50 100 0.
2 0.
85 120 11 *2 typ max Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 220 0.
6 1.
2 20 Rank classification Rank hFE1 Q 90 ~ 155 2SD968 2SD968A WQ VQ R 130 ~ 220 WR VR Pulse measurement Marking Symbol 2.
5±0.
1 +0.
25 Unit V V V V MHz pF 1 Transistor PC — Ta 1.
4 2SD968, 2SD968A IC — VCE IB=20mA 1.
2 1.
2 IC — I B Ta=25˚C 12mA 10mA 8mA 6mA 1.
...


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