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2SJ217

Hitachi Semiconductor
Part Number 2SJ217
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ217 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistan...
Datasheet PDF File 2SJ217 PDF File

2SJ217
2SJ217

Overview
2SJ217 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SJ217 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg...


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