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2SJ221

Hitachi Semiconductor
Part Number 2SJ221
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ221 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed ...
Datasheet PDF File 2SJ221 PDF File

2SJ221
2SJ221

Overview
2SJ221 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SJ221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –20 –80 –20 75 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –100 ±20 — — –1.
0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7.
5 — — — — — — — — — Typ — — — — — 0.
12 0.
16 12 1800 680 145 15 115 320 170 –1.
05 280 Max — — ±10 –250 –2.
0 0.
16 0.
22 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = –20 A, VGS = 0 I F = –20 A, VGS = 0, diF/dt = 50 A/µs I D = –10 A, VGS = –10 V, RL = 3 Ω Unit V V µA µA V Ω Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –80 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –10 A, VGS = –10 V*1 I D = –10 A, VGS = –4 V*1 I D = –10 A, VDS = –10 V*1 VDS = –10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test VGS(off) RDS(on) 2 2SJ221 Power vs.
Temperature Derating 120 Channel Dissipation Pch (W) –100...


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