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2SJ278

Hitachi Semiconductor
Part Number 2SJ278
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spee...
Datasheet PDF File 2SJ278 PDF File

2SJ278
2SJ278

Overview
2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline UPAK 2 1 4 3 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SJ278 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –1 –4 –1 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 10 µs, dut...


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