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2SJ412

Toshiba Semiconductor
Part Number 2SJ412
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and M...
Datasheet PDF File 2SJ412 PDF File

2SJ412
2SJ412

Overview
2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.
15 Ω (typ.
) • High forward transfer admittance: |Yfs| = 7.
7 S (typ.
) • Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche cur...


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