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2SJ450

Hitachi Semiconductor
Part Number 2SJ450
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • • • • Low...
Datasheet PDF File 2SJ450 PDF File

2SJ450
2SJ450

Overview
2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st.
Edition Application High speed power switching Features • • • • Low on-resistance.
Low drive power High speed switching 2.
5 V gate drive device.
Outline UPAK 2 1 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –1 –2 –1 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 100 µs, duty cycle ≤ 10% 2.
When using aluminium ceramic board (12.
5 × 20 × 70 mm) 2 2SJ450 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –60 ±20 — — –0.
5 — — 0.
6 — — — — — — — — — Typ — — — — — 0.
85 1.
1 1.
0 150 72 24 6 9 50 35 –0.
9 100 Max — — –50 ±10 –1.
5 1.
2 1.
9 — — — — — — — — — — Unit ...


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