DatasheetsPDF.com

2SJ461

NEC
Part Number 2SJ461
Manufacturer NEC
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTIO...
Datasheet PDF File 2SJ461 PDF File

2SJ461
2SJ461

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a 2.
5 V power source.
The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit.
FEATURES • Can be driven by a 2.
5 V power source • Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
2.
9 ±0.
2 0.
95 0.
95 PACKAGE DRAWING (Unit: mm) +0.
1 –0.
05 2.
8 ±0.
2 1.
5 0.
65 +0.
1 –0.
15 0.
4 +0.
1 –0.
05 2 3 1 Marking 0.
4 +0.
1 –0.
06 1.
1 to 1.
4 0.
3 0.
16 ORDERING INFORMATION PART NUMBER 2SJ461 Marking: H19 PACKAGE SC-59 (Mini Mold) 0 to 0.
1 1.
Source 2.
Gate 3.
Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −50 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation VGSS ID(DC) ID(pulse) PT m7.
0 m0.
1 m0.
2 200 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V A A mW °C °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D10730EJ4V0DS00 (4th edition) Date Published April 2005 NS CP(K) Printed in Japan The mark shows major revised points.
1995 ELECTRICAL CHARACTER...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)