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2SJ463A

NEC
Part Number 2SJ463A
Manufacturer NEC
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIP...
Datasheet PDF File 2SJ463A PDF File

2SJ463A
2SJ463A


Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.
5 V power source.
The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
Package Drawings (unit: mm) 0.
3 +0.
1 –0 2.
0 ±0.
2 0.
65 0.
65 2 2.
1 ±0.
1 1.
25 ±0.
1 • Can be driven by a 2.
5 V power source.
0.
3 • Low Gate Cut-off Voltage.
Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 +20 +0.
1 +0.
4 Note 150 150 –55 to +150 V V A A mW °C °C 0.
9 ±0.
1 Equivalent Circuit Drain Electrode Connection 1.
Source 2.
Gate 3.
Drain Internal Diode Note PW ≤ 10 µs, Duty Cycle ≤ 1 % Gate Gate Protect Diode Source Marking : H21 The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Document No.
D11198EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan 0 to 1.
1 © 0.
15+0.
1 –0.
05 0.
3 +0.
1 –0 FEATURES 1 3 1996 2SJ463A ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 –1.
0 20 23 60 –1.
4 MIN.
TYP.
MAX.
–1 +10 –1.
7 UNIT TEST CONDITIONS VDS = –30 V, VGS = 0 VGS = +20 V, VDS = 0 VDS = –3 V, ID = –10 µA VDS = –3 V, ID = –10 mA VGS = –2.
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