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2SJ484

Hitachi Semiconductor
Part Number 2SJ484
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R D...
Datasheet PDF File 2SJ484 PDF File

2SJ484
2SJ484

Overview
2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd.
Edition Features • Low on-resistance R DS(on) = 0.
18 Ω typ.
(at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.
Outline UPAK 2 3 1 4 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –30 ±20 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 100 µs, duty cycle ≤ 10 %...


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