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2SJ493 Datasheet PDF


Part Number 2SJ493
Manufacturer NEC
Title P-Channel MOSFET
Description This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance ...
Features
• Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS =
  –10 V, ID =
  –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =
  –4 V, ID =
  –8 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS ...

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Datasheet 2SJ493 PDF File








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2SJ49 : This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer .

2SJ492 : This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 1210 pF (TYP.) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note2 Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg –60 # 20 V V V A A W W °C °C A mJ –20, 0 # 20 # 80 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) .

2SJ494 : This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 FEATURES • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V, ID = –10 A) • Low Ciss Ciss = 2360 pF Typ. 0.7±0.1 2.54 • Built-in Gate Protection Diode 13.5 MIN. 12.0±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature VD.

2SJ495 : This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 FEATURES • Super Low On-State Resistance 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A) • Low Ciss Ciss = 4120 pF TYP. • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature *f = 20 kHz, Duty Cycle ≤ 10% (+Side) **PW ≤ 10 µs, Duty Cycle ≤ 1% VDSS V.

2SJ496 : 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3.

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